Published July 1975 | Version v1
Journal article

Semiconductor lasers with the light output through the diffraction grating on the surface of a waveguide layer

Description

In AlAs--GaAs semiconductor heterojunction lasers, due to the interaction of the waveguide modes with a diffraction grating on the surface of the waveguide layer, output of coherent radiation has been obtained through the plane parallel to the layer. The angle of divergence of the radiation in this case was equal to 0.50 both with optical and injection pumping. The possibility of fabricating a new type of semiconductor laser with small radiation divergence has been proven experimentally

Additional details

Identifiers

Publishing Information

Journal Title
IEEE Journal of Quantum Electronics
Journal Volume
11
Journal Issue
7
Series
IEEE J. Quant. Electron.
Journal Page Range
449-451
ISSN
0018-9197

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7237298
Subject category
S42: ENGINEERING;
Descriptors DEI
ALUMINIUM ARSENIDES; EMISSION SPECTRA; FABRICATION; GALLIUM ARSENIDES; OPERATION; SEMICONDUCTOR LASERS; SPECIFICATIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTRA

Optional Information

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