Published July 1975
| Version v1
Journal article
Semiconductor lasers with the light output through the diffraction grating on the surface of a waveguide layer
Creators
- 1. Ioffe Physical-Technical Inst., Leningrad
Description
In AlAs--GaAs semiconductor heterojunction lasers, due to the interaction of the waveguide modes with a diffraction grating on the surface of the waveguide layer, output of coherent radiation has been obtained through the plane parallel to the layer. The angle of divergence of the radiation in this case was equal to 0.50 both with optical and injection pumping. The possibility of fabricating a new type of semiconductor laser with small radiation divergence has been proven experimentally
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Journal of Quantum Electronics
- Journal Volume
- 11
- Journal Issue
- 7
- Series
- IEEE J. Quant. Electron.
- Journal Page Range
- 449-451
- ISSN
- 0018-9197
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7237298
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- ALUMINIUM ARSENIDES; EMISSION SPECTRA; FABRICATION; GALLIUM ARSENIDES; OPERATION; SEMICONDUCTOR LASERS; SPECIFICATIONS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTRA
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent