Published July 2016
| Version v1
Journal article
Electronic spectrum of Bi-related defects in crystalline CdTe
Creators
- 1. National Research Nuclear University MEPhI, 115409 Moscow (Russian Federation)
- 2. P.N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation)
Description
Using measurements of conductivity and low-temperature photoluminescence, we have studied electronic levels in the band gap of CdTe:Bi and CdTe:Bi,Cl single crystals grown by the modified Bridgman technique. Three type of deep levels (EV+0.29 eV, EV+0.4 eV, EV+0.72 eV) and Bi-related shallow acceptor have been observed depending on the doping conditions. Energy spectrum of a shallow Bi-related acceptor has been measured and its low symmetry has been established. The tentative interpretation for all the levels observed has been proposed. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201510274Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 13
- Journal Issue
- 7-9
- Journal Page Range
- p. 481-485
- ISSN
- 1610-1642
Conference
- Title
- 17. International conference on II-VI compounds and related materials
- Acronym
- II-VI 2015
- Dates
- 13-18 Sep 2015
- Place
- Paris (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 47097615
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; BISMUTH ADDITIONS; BRIDGMAN METHOD; CADMIUM TELLURIDES; CHLORINE ADDITIONS; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EXCITED STATES; HYBRIDIZATION; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; VALENCE
- Descriptors DEC
- ALLOYS; BISMUTH ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; EMISSION; ENERGY; ENERGY LEVELS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Notes
- With 4 figs., 2 tabs., 18 refs.