p-type conduction in Zn-ion implanted InN films

We report p-type conductivity in wurtzite indium nitride (InN) experimentally and theoretically. The as-deposited InN films are implanted with various doses of Zn ions. The Hall coefficient is positive for samples with doses of 2.5 ∼ 10   ×   10¹⁴ ions cm⁻² at low temperature and turns negative as the temperature increases. This notable sign change of the Hall coefficient confirms the existence of mobile holes in Zn-implanted InN. Moreover, first principle calculations indicate that Zn may be a more stable p-type dopant in InN than that of Mg and Ba because of its low ionization energy. (paper)