Published May 15, 2012 | Version v1
Journal article

Addendum to ''Phase selection and transition in Hf-rich hafnia-titania nanolaminates'' (on SiO2) [J. Appl. Phys. 109, 123523 (2011)]: Hafnon formation

  • 1. Department of Chemistry and Biochemistry, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201 (United States)

Description

Continued investigation of hafnia-titania nanolaminates on silica substrates after long term annealing shows that hafnon (HfSiO4) is formed, in addition to the previously reported phases. Here, a 293 nm-thick stack of 5 nm HfO2-4 nm TiO2 bilayers (0.51 mole fraction HfO2) is sputter deposited on fused SiO2 and annealed in air at 1173 K for up to 192 h and then at 1273 K for up to 96 h. X-ray diffraction shows that hafnon crystallizes after 24 h at 1273 K. Micro-Raman spectroscopy/microscopy shows that hafnon crystallization is heterogeneous. No film-substrate reaction is observed for single layer HfO2 on SiO2 annealed under similar conditions. We suggest the nanolaminate's complex annealed microstructure provides fast diffusion paths that enable hafnon formation.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
111
Journal Issue
10
Journal Page Range
p. 109904-109904.3
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2012 American Institute of Physics