Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Creators
- 1. Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
- 2. Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- 3. IQE Inc., Bethlehem, Pennsylvania 18015 (United States)
Description
The experimental study of the valence band offset (ΔEv) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a ΔEv of 0.39 ± 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be ∼0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.
Additional details
Identifiers
- DOI
- 10.1063/1.4775606;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 113
- Journal Issue
- 2
- Journal Page Range
- p. 024319-024319.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44059983
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; CRYSTAL GROWTH; ENERGY GAP; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EPITAXY; MATERIALS; MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; TRANSISTORS
Optional Information
- Notes
- (c) 2013 American Institute of Physics