Published November 2, 2009
| Version v1
Journal article
Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si
- 1. Aix-Marseille Universite, IM2NP, F-13397 Marseille Cedex (France) and CNRS, IM2NP (UMR 6242) Faculte de Saint-Jerome, Case 142, F-13397 Marseille Cedex (France)
Description
In situ measurements of the kinetics of the transient θ-Ni2Si phase formation have been obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for the transient phase is proposed. It allows to simulate the growth and the consumption of the θ-Ni2Si during the growth of the δ-Ni2Si silicide.
Additional details
Identifiers
- DOI
- 10.1063/1.3257732;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 95
- Journal Issue
- 18
- Journal Page Range
- p. 181902-181902.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41040477
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CALORIMETRY; CRYSTAL GROWTH; DEPOSITION; NICKEL; NICKEL COMPOUNDS; REACTION KINETICS; SILICIDES; SILICON; SPUTTERING; THIN FILMS; TRANSIENTS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; FILMS; KINETICS; METALS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2009 American Institute of Physics