Atom and carrier depth distributions for 300 keV arsenic channeled in the <110> of silicon as a function of alignment angle and ion fluence

Depth distributions of As atoms measured by SIMS, and of associated carriers measured by differential C-V, both give a measured most probable channeling range Rsub(c) of 3.35 to 3.40 μm for 300 keV As ions implanted in the <110> of Si, aligned within approximately 0.05 deg (proper or axial channeling). The As ion fluences used were 3.0 x 1013 and 1.0 x 1014, and 1.5 x 1012 cm-2, for the SIMS and C-V, respectively, and the lowest atom and carrier densities measured in the profiles were 1 x 1015 and 1 x 1014 cm-3, respectively. The maximum or saturated As density measured at Rsub(c) was approximately 1.5 x 1016 cm-3. The depth distribution for 0.50 deg misalignment from the <110> differed only slightly, probably within the experimental measurement reproducibility, and the Rsub(c) was still approximately 3.4 μm. Atom and carrier depth distributions are also shown for misalignment angles of 1.0 and 2.0 deg from the <110> of Si and are significantly degraded. Comparison of the SIMS profiles shows that channeling has saturated by the time an ion fluence of 3 x 1013 cm-2 is reached. No significant redistribution of channeled As atoms occurs upon annealing at 8000C for 30 min. (author)