Published April 1978 | Version v1
Journal article

Rate and activation energy of creep in CdTe and HgTe crystals

Creators

  • 1. L'vovskij Politekhnicheskij Inst. (Ukrainian SSR)

Description

The creep of CdTe and HgTe crystals was studied by the method of microhardness. Calculated are the values of the creep rate depending on the loading time (1-60 s) and temperature (300-500 K). The rate saturation is observed in CdTe crystals beginning with t=20s. In HgTe crystals the unstable creep is observed even at t deg = 60 s. The temperature dependences are non-monotonous that reflects the characteristic features of the dislocation motion over barriers of various types. Values of the activation energies are given

Additional details

Additional titles

Original title (Russian)
Скорость и энергия активации ползучести в кристаллах CdTe и HgTe

Publishing Information

Journal Title
Ukr. Fiz. Zh.
Journal Volume
23
Journal Issue
4
Series
Ukr. Fiz. Zh.
Journal Page Range
635-639

Optional Information

Notes
For English translation see the journal Ukr. Phys. J.