Published May 2013
| Version v1
Journal article
Ionic conductivity and dielectric relaxation in γ-irradiated TlGaTe2 crystals
Creators
- 1. National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan)
- 2. National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
Description
The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe2 crystals subjected to various γ-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe2 crystals are discussed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 47
- Journal Issue
- 5
- Journal Page Range
- p. 707-712
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44081646
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTALS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GALLIUM TELLURIDES; INSTABILITY; IONIC CONDUCTIVITY; IRRADIATION; MODULATION; PERMITTIVITY; RADIATION DOSES; RELAXATION; TEMPERATURE DEPENDENCE; THALLIUM TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC PROPERTIES; DOSES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; THALLIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Pleiades Publishing, Ltd.