Scintillation properties of GSO
- 1. Schlumberger-Doll Research, Ridgefield, CT (USA)
- 2. Hitachi Chemical Co. Ltd., Tokyo (Japan)
Description
The timing properties of Gd2SiO5:Ce (GSO) single crystal scintillators have previously been evaluated for positron emission tomography applications. The measured time resolution, however, was worse than expected from calculations based on photoelectron yield and a 60 nanosecond exponential decay constant, leading us to further investigate GSO's basic properties. With a time-correlated-single-photon technique, the authors have found two decay components, one of 56 ns and one of 600 ns, the latter containing 10--15% of the total scintillation output. This may explain the difference between the experimental and theoretical time resolutions and confirms a previous hypothesis of a long decay component. In addition, the authors have found that each component's decay constant strongly depends on the cerium concentration. The primary component varies from ∼ 20 ns to ∼ 190 ns and the secondary component varies from ∼ 70 ns to ∼ 1200 ns as the cerium concentration is varied from 5.0 mol% to 0.1 mol%
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 37
- Journal Issue
- 2
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 161-164
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Institute for Electronic and Electrical Engineers (IEEE) nuclear science symposium.
- Dates
- 15-19 Jan 1990.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22002407
- Subject category
- S38: RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR CHEMISTRY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S62: RADIOLOGY AND NUCLEAR MEDICINE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CERIUM; CHEMICAL COMPOSITION; CRYSTAL LATTICES; DECAY; GADOLINIUM; POSITRON COMPUTED TOMOGRAPHY; SCINTILLATIONS; SI SEMICONDUCTOR DETECTORS; SILICON OXIDES; SINGLE PHOTON ECT
- Descriptors DEC
- CHALCOGENIDES; COMPUTERIZED TOMOGRAPHY; CRYSTAL STRUCTURE; ELEMENTS; EMISSION COMPUTED TOMOGRAPHY; MEASURING INSTRUMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATION DETECTORS; RARE EARTHS; SEMICONDUCTOR DETECTORS; SILICON COMPOUNDS; TOMOGRAPHY
Optional Information
- Secondary number(s)
- CONF-900143--.