Published December 1996
| Version v1
Journal article
Electric Field Scaling at a B=0 Metal-Insulator Transition in Two Dimensions
- 1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
- 2. Laboratory for Electronic Properties of Materials and Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)
Description
The nonlinear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, ν≅1.5, and the dynamical exponent, z≅0.8, close to the theoretical value z=1. copyright 1996 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 77
- Journal Issue
- 24
- Journal Page Range
- p. 4938-4941.
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28012547
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON DENSITY; NONLINEAR PROBLEMS; SCALING; SILICON; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHEMICAL REACTIONS; CORROSION; ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; SEMIMETALS