Ion beam-assisted etching of semiconductors: surface chemistry vs surface physics

This paper addresses the fundamental aspects of etching semiconductors with inert gas beams in the presence of a suitable precursor gas. In particular, the changes that an energetic bombarding ionic species can cause to the surface and sub-surface region of a solid are considered, both in terms of the physical perturbation to the semiconductor and the chemical processes that can be provoked in any adsorbed states present. The relationship between surface chemistry and surface physics is addressed in terms of achieving an ultra-low damage chemically assisted ion beam etching reaction. (author)