Energy barriers for diffusion on heterogeneous stepped metal surfaces: Ag/Cu(110)
- 1. Laboratoire de la Physique de la Matière Condensée, Université Chouaib Doukkali, Faculté des sciences, El Jadida (Morocco)
- 2. Ecole Normale Supérieure, Université Hassan II, Ain Chock, Casablanca (Morocco)
- 3. Academy Hassan II of Sciences and Technology, Rabat (Morocco)
- 4. Laboratoire de la Physique de la Matière Condensée (URAC 10), Université Hassan II Mohammedia, Faculté des Sciences Ben M'Sick, Casablanca (Morocco)
- 5. Ecole Nationale des Sciences Appliquée, Université Chouaib Doukkali, El Jadida (Morocco)
- 6. Department of Physics, University of Central Florida (United States)
Description
In this paper we investigated the diffusion of Ag adatom by computing the energy barriers for many elementary diffusive processes which are likely to happen near to the step edge on Cu (110). The barriers are calculated by means of molecular dynamics simulation by using embedded atom potentials. The proximity to steps alters these barriers considerably, and very different results may be expected. In fact, our numerical calculations show that the diffusion via jump process along step edge is predominant for Ag/Cu(110) and the diffusion over the step occurs sometimes, but only via exchange mechanisms. The adatom diffusion across channels is difficult due to the high value of activation energy required (around 1 eV). Furthermore, we found the Ehrlich–Schwoebel barrier for diffusion around 120 meV in order to descend via exchange process and of the order of 170 meV via hopping mode. This aspect may have a strong influence on the growth character. In general our results suggest that, for our metal system, diffusion mechanism may be important for mass transport across the steps. Implications of these findings are discussed. - Highlights: • Study of adatom diffusion near the step edge • The diffusion along channel is enhanced through jump process. • Arrhenius law is satisfied for a wide range of temperature (310–600 K)
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.09.064Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.09.064;
- PII
- S0040-6090(13)01536-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 548
- Journal Page Range
- p. 331-335
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46128510
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ATOMS; COPPER; CRYSTAL STRUCTURE; DIFFUSION BARRIERS; EV RANGE; MOLECULAR DYNAMICS METHOD; SILVER; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; ENERGY; ENERGY RANGE; METALS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.