Published June 30, 2005 | Version v1
Journal article

Molecular-beam Epitaxial Growth Of α-Zn0.05Sr0.95S Codoped With Eu And Sm On MgO(001) Substrate Via α-MnS Buffer Layer

  • 1. Information Storage Materials Laboratory, Department of Electrical and Compute Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
  • 2. Data Storage Institute, 5, Engineering Drive 1, Singapore 117608 (Singapore)

Description

High quality α-ZnxSr1-xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using α-MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ∼ 620 nm when visible-light-irradiated α-Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
772
Journal Issue
1
Journal Page Range
p. 167-168
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
27. international conference on the physics of semiconductors
Acronym
ICPS-27
Dates
26-30 Jul 2004
Place
Flagstaff, AZ (United States)

Optional Information

Notes
(c) 2005 American Institute of Physics