Published November 1, 2019 | Version v1
Journal article

Double integrated laser-thyristor

  • 1. OJSC M.F. Stel'makh Polyus Research Institute, ul.Vvedenskogo 3, korp. 1, 117342 Moscow (Russian Federation)
  • 2. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)

Description

Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same. (lasers)

Availability note (English)

Available from http://dx.doi.org/10.1070/QEL17104

Additional details

Identifiers

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
49
Journal Issue
11
Journal Page Range
p. 1011-1013
ISSN
1063-7818
CODEN
QUELEZ

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52045366
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
LASERS; PULSES; SEMICONDUCTOR MATERIALS; THYRISTORS; VERTICAL INTEGRATION
Descriptors DEC
MATERIALS; SEMICONDUCTOR DEVICES