Published November 1, 2019
| Version v1
Journal article
Double integrated laser-thyristor
Creators
- 1. OJSC M.F. Stel'makh Polyus Research Institute, ul.Vvedenskogo 3, korp. 1, 117342 Moscow (Russian Federation)
- 2. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021 St. Petersburg (Russian Federation)
Description
Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same. (lasers)
Availability note (English)
Available from http://dx.doi.org/10.1070/QEL17104Additional details
Identifiers
- DOI
- 10.1070/QEL17104;
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 49
- Journal Issue
- 11
- Journal Page Range
- p. 1011-1013
- ISSN
- 1063-7818
- CODEN
- QUELEZ
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52045366
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- LASERS; PULSES; SEMICONDUCTOR MATERIALS; THYRISTORS; VERTICAL INTEGRATION
- Descriptors DEC
- MATERIALS; SEMICONDUCTOR DEVICES