Studies of control materials of isotope transformation

Isotope enrichment of silicone, Si thin film preparation and development of high functional structure materials of SiC were studied in this paper. The results obtained showed that Si2F6 gas, the active materials for separating isotopes, was obtained at about 80% yield, 99.9% purity. High enrichment conditions of 28Si, 29Si and 30Si in the selective decomposition of Si2F6 isotopes by IR lazer were determined. 28Si in unreacted Si2F6 was concentrated to 99.72%. 29Si was concentrated to 12.3%, 9.6% yield, at 956.205 cm-1. The concentration of 30Si was 43.3% at 951.203 cm-1 and 30SiF4 was produced continuously at 4.4% yield. Large concentration of 30Si was obtained by repeating concentration in Si2F6. Silicon crystal was prepared by direct decomposition of SiF4 or SiF6 by means of CVD method under controlling the temperature from 350 to 450degC, and the yield was about 28%. (S.Y.)