Influence of gamma radiation to the parameters of silicon dual barrier structure

Full text : Silicon p-n photo detector, up to now is the most widespread type of photo converters. Photo detector with increased integral sensitivity in visible range of the spectrum represents interests in such spheres as ecology, scientific instrument-making and so on. This work presents the results on silicon planar structures of multi-barrier design with internal amplification. Current control is realized by means of light in these structures, thus increasing the sensitivity of the integral reaches 0.5 A / watt. Improved radiation detectors proven true, and is the subject of our research. At the same time on the emitter junction, an additional direct voltage, this increases the injection of holes from the emitter to the base. This work presents the results of the study the current-voltage characteristics and spectral barer Scotty and p n junction. Analysis of experimental results showed that the structure can be successfully used as a dosimeter with a scintillation-based NaITl.