Influence of H on the composition and atomic concentrations of 'N-rich' plasma deposited SiOxNyHz films
Creators
- 1. Abt. Silizium-Photovoltaik und Ionenstrahl-Labor, Hahn-Meitner-Institut, 12489, Berlin (Germany)
- 2. Departamento Fisica Aplicada III, Universidad Complutense de Madrid, 28040, Madrid (Spain)
Description
The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiOxNyHz films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute concentrations of all the species present in the SiOxNyHz, including H, was measured by heavy-ion elastic recoil detection analysis (HI-ERDA). Samples were deposited from SiH4, O2, and N2 gas mixtures, with different gas flow ratios in order to obtain compositions ranging from SiNyHz to SiO2. Those samples deposited at higher SiH4 partial pressures show both Si-H and N-H bonds, while those deposited at lower SiH4 partial pressures show N-H bonds only. The Si-H and N-H bond concentrations were found to be proportional to the N concentration. The concentration of H was evaluated from the Si-H and N-H stretching absorption bands and compared to the HI-ERDA results, finding good agreement between both measurements. The deviation from H-free stoichiometric SiOxNy composition due to the presence of N-H bonds results in an effective coordination number of N to produce Si-N bonds lower than 3. By fitting the experimental composition data to a theoretical model taking into account the influence of N-H bonds, the actual concentration of N-H bonds was obtained, making evident the presence of nonbonded H. The presence of Si-H and Si-Si bonds was found to partially compensate the effect of N-H bonds, from the point of view of the relative N and Si contents. Finally, the presence of N-H bonds results in a lower Si atom concentration with respect to the stoichiometric film, due to a replacement of Si atoms by H atoms. This decrease of the Si concentration is lower in those films containing Si-H and Si-Si bonds. A model was developed to calculate the Si, O, and N atom concentrations taking into account the influence of N-H, Si-H, and Si-Si bonds, and was found to be in perfect agreement with the experimental data measured by HI-ERDA
Additional details
Identifiers
- DOI
- 10.1063/1.1699525;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 95
- Journal Issue
- 10
- Journal Page Range
- p. 5373-5382
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36010221
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- CHEMICAL BONDS; COORDINATION NUMBER; DEPOSITION; FOURIER TRANSFORM SPECTROMETERS; GAS FLOW; HEAVY IONS; INFRARED SPECTRA; NITROGEN; PARTIAL PRESSURE; PLASMA; RECOILS; SILANES; SILICON OXIDES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; FILMS; FLUID FLOW; HYDRIDES; HYDROGEN COMPOUNDS; IONS; MEASURING INSTRUMENTS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2004 American Institute of Physics.