Published November 2010 | Version v1
Book Metadata-only

Total dose irradiation effect on domestic partially-depleted SOIPMOSFET

Creators

  • 1. Graudate School of the Chinese Academy of Sciences, Beijing (China)
  • 2. Xinjiang Key Laboratory of Electric Infomration Materials and Devices, Xinjiang (China)
  • 3. The Xinjiang Technical Inst. of Physics and Chemistry, Chinese Academy of Sciences, Urumqi (China)
  • 4. Institute of Microelectronics of Chinese Academy of Sciences, Beijing (China)

Description

Total dose irradiation and annealing effects of domestic partially-depleted SOI PMOSFET were studied. It is found that the back gate is more sensitive to total dose irradiation. During annealing, it is the interface traps that determine the balance position of the top gate sub-threshold curve. While the tunneling and thermal emission electrons can only neutralize parts of the oxide traps in the buried oxide, making the back gate sub-threshold curve negatively away from the original one after a long time annealing. (authors)

Part of:
Progress report on nuclear science and technology in China (Vol.1). Proceedings of academic annual meeting of China Nuclear Society in 2009, No.7--nuclear electronics

Additional details

Publishing Information

Publisher
Atomic Energy Press
Imprint Place
Beijing (China)
ISBN
978-7-5022-5040-9
Imprint Title
Progress report on nuclear science and technology in China (Vol.1). Proceedings of academic annual meeting of China Nuclear Society in 2009, No.7--nuclear electronics
Imprint Pagination
276 p.
Journal Page Range
p. 160-164

Conference

Title
academic annual meeting of China Nuclear Society
Acronym
'09
Dates
18-20 Nov 2009
Place
Beijing (China)

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
44032724
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; COBALT 60; DOSES; ELECTRIC CURRENTS; ELECTRON EMISSION; GAMMA RADIATION; INTERFACES; IRRADIATION; MOSFET; OXIDES; PHYSICAL RADIATION EFFECTS; TRAPS; TUNNEL EFFECT
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; CURRENTS; ELECTROMAGNETIC RADIATION; EMISSION; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information

Notes
4 figs., 5 refs.