Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

Localisation lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schroedinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∝1nm, the electrons are localised on scale of ∝7 nm. We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)