Published September 2004 | Version v1
Journal article Metadata-only

Preparation and properties of thin InSb layers on Al2O3

Creators

  • 1. Inst. Obshchej i Neorganicheskoj Khimii im. N.S. Kurnakova, Moscow (Russian Federation)
  • 2. Inst. Fiziko-Khimicheskikh Problem Keramicheskikh Materialov Rossijskoj Akademii Nauk, Moscow (Russian Federation)

Description

Thin layers of tellurium doped indium antimonide on a sapphire substrate are obtained by melt directed crystallization. An effective coefficient of tellurium distribution is determined, electrical properties of thin layers - electron mobility and density as well as resistivity in a temperature range of 77-300 K - are studied. A consideration is given to possible scattering mechanisms determining electrical properties of the layers

Abstract (Russian)

Направленной кристаллизацией расплава получены тонкие слои легированного теллуром антимонида индия на сапфире. Определен эффективный коэффициент распределения теллура, изучены электрические свойства тонких слоев - подвижность и концентрация электронов, а также удельное сопротивление в диапазоне температур 77-300 К. Рассмотрены возможные механизмы рассеяния, определяющие электрические параметры сформированных слоев

Additional details

Additional titles

Original title (Russian)
Получение и свойства тонких слоев InSb на Ал

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
40
Journal Issue
9
Journal Page Range
p. 1031-1034
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
37020152
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTALLIZATION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; INDIUM ANTIMONIDES; MONOCRYSTALS; ORIENTATION; SAPPHIRE; SUBSTRATES; TELLURIUM ADDITIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THIN FILMS
Descriptors DEC
ALLOYS; ANTIMONIDES; ANTIMONY COMPOUNDS; CORUNDUM; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; FILMS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; MINERALS; MOBILITY; OXIDE MINERALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; TELLURIUM ALLOYS; TEMPERATURE RANGE

Optional Information

Notes
9 refs., 4 figs., 1 tab.