Published 1988
| Version v1
Miscellaneous
Effect of annealing on the heterostructure of InxGa1-xAs/GaAs stressed layers
- 1. Universidade Estadual de Campinas (Brazil). Inst. de Fisica
- 2. TELEBRAS, Campinas (Brazil). Centro de Pesquisas
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Efeito de recozimento em heteroestrutura de camadas tensionadas de In
Publishing Information
- Imprint Title
- Proceedings of the 11. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 299 p.
- Journal Page Range
- p. 245.
Conference
- Title
- 11. National Meeting on Condensed Matter Physics.
- Dates
- 9-13 May 1988.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 19087339
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ANNEALING; CRYSTAL GROWTH; DIFFUSION; GALLIUM ARSENIDES; INDIUM COMPOUNDS; LAYERS; SPECTROSCOPY; STRESS RELAXATION; SUPERLATTICES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; HEAT TREATMENTS
Optional Information
- Notes
- Imprint:Anais do 11. Encontro Nacional de Fisica da Materia Condensada.