Published December 1982
| Version v1
Journal article
Thermally stimulated current in amorphous selenium
Creators
- 1. Dongguk Univ., Seoul (Republic of Korea). Coll. of Liberal Art and Science
Description
Deep traps in amorphous selenium are measured by means of a thermally sitmulated current(TCS) technique. Peak shape method, initial rise method, and heating rate method are applied to obtain the trap activation energy. Two TSC peaks were observed near 204K and 310K, which were identified as having oro.inated from two hole trap levels at 0.92eV and 0.23eV, above the valence band respectively. It is found that the trapped carriers are mainly holes in the temperature range 70-330K. (Author)
Additional details
Publishing Information
- Journal Title
- J. Mater. Sci. Res. Inst., Dongguk Univ.
- Journal Volume
- 2
- Series
- J. Mater. Sci. Res. Inst., Dongguk Univ.
- Journal Page Range
- 51-58
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 14777528
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ELECTRIC CURRENTS; HOLES; LOW TEMPERATURE; MEDIUM TEMPERATURE; SELENIUM; TRAPS
- Descriptors DEC
- CURRENTS; ELEMENTS; SEMIMETALS