Published September 1972 | Version v1
Journal article Metadata-only

A 'four parameters' model that fits the degradation curve ΔVsub(G) (VsubG) of MOS transistors under irradiation

Creators

  • 1. Centre National de la Recherche Scientifique, 31 - Toulouse (France). Lab. d'Automatique et de ses Applications Spatiales

Description

no abstract available

Additional details

Identifiers

DOI
10.1016/0038-1101(72)90147-5;

Publishing Information

Journal Title
Solid-State Electronics
Journal Volume
15
Journal Issue
9
Series
Solid-State Electron.
Journal Page Range
1029-1031
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
4041116
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; INTERFACES; IRRADIATION; METALS; MOS TRANSISTORS; OXIDES; PHOTOELECTRIC EFFECT; RADIATION EFFECTS; SCHOTTKY EFFECT; SILICON; SPACE CHARGE; SURFACE BARRIER TRANSISTORS
Descriptors DEC
CURRENTS; ELEMENTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS

Optional Information

Notes
Letter-to-the-editor.; Updated automatically by Metadata and Full-Text Enrichment Agent