Published September 2006 | Version v1
Journal article Metadata-only

Structural, electrical and optical properties of Bi-doped CuInS2 thin films grown by vacuum evaporation method

Creators

  • 1. Department of Electrical Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki 885-8567 (Japan)
  • 2. Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan)

Description

Structural, electrical and optical properties of Bi-doped CuInS2 thin films prepared by a single-source thermal evaporation method were investigated. The as-deposited films were annealed in the temperature range between 100 and 500 C for 10 min in air. The film of chalcopyrite CuInS2 single phase was obtained by annealing at 200 C successfully. It was found that Bi atoms enhanced the growth of CuInS2 single phase at lower temperature. Furthermore, the crystalline quality of doped films was higher compared with the non-doped ones. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200669626

Additional details

Identifiers

DOI
10.1002/pssc.200669626;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
8
Journal Page Range
p. 2597-2600
ISSN
1610-1634

Conference

Title
15. International conference on ternary and multinary compounds (ICTMC-15)
Dates
6-10 Mar 2006
Place
Kyoto (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37101924
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; BISMUTH ADDITIONS; CARRIER DENSITY; CARRIER MOBILITY; COPPER SULFIDES; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; INDIUM SULFIDES; OPACITY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TETRAGONAL LATTICES; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ALLOYS; BISMUTH ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; MOBILITY; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SCATTERING; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 4 figs., 23 refs.. SICI: 1610-1634(200609)3:8<2597::AID-PSSC200669626>3.0.TX;2-2