Realization of a flux-driven memtranstor at room temperature

The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite (Ba_0.5Sr_1.5Co₂Fe₁₁AlO₂₂) where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q–φ relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities. (paper)