Published July 15, 2004 | Version v1
Journal article

Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma

Description

Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-voltage) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements: Hg/InN/InP(100) Schottky diodes present different electrical characteristics for the grazing and normal flow. The passivation effect of the nitride layers depends on the incident nitrogen angle flow

Additional details

Identifiers

DOI
10.1016/j.apsusc.2004.05.029;
PII
S0169433204006300;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
234
Journal Issue
1-4
Journal Page Range
p. 451-456
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
9. international conference on the formation of semiconductor interfaces
Dates
15-19 Sep 2003
Place
Madrid (Spain)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37093523
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AUGER ELECTRON SPECTROSCOPY; INDIUM NITRIDES; INDIUM PHOSPHIDES; LAYERS; MERCURY; NITRIDATION; NITROGEN; PLASMA; SCHOTTKY BARRIER DIODES; SURFACES
Descriptors DEC
CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; ELEMENTS; INDIUM COMPOUNDS; METALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.