Published July 15, 2004
| Version v1
Journal article
Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
Description
Auger electron spectroscopy (AES) was used to investigate the processes taking place during the initial stages of InP(100) surfaces nitridation. This AES study combined with electrical measurements (intensity-voltage) shows that the processes greatly differ depending on the nitridation angles. Results show that with grazing angle for nitrogen flow, the nitridation process is more efficient. Results obtained with AES spectra are coherent with electrical measurements: Hg/InN/InP(100) Schottky diodes present different electrical characteristics for the grazing and normal flow. The passivation effect of the nitride layers depends on the incident nitrogen angle flow
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2004.05.029;
- PII
- S0169433204006300;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 234
- Journal Issue
- 1-4
- Journal Page Range
- p. 451-456
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 9. international conference on the formation of semiconductor interfaces
- Dates
- 15-19 Sep 2003
- Place
- Madrid (Spain)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37093523
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; INDIUM NITRIDES; INDIUM PHOSPHIDES; LAYERS; MERCURY; NITRIDATION; NITROGEN; PLASMA; SCHOTTKY BARRIER DIODES; SURFACES
- Descriptors DEC
- CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; ELEMENTS; INDIUM COMPOUNDS; METALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.