CdSe epitaxial layers activated by In

This report gives information on the synthesis and certain properties of epitaxial In-doped CdSe films (CdSe:In). Activation was performed directly during film synthesis by simultaneous evaporation of CdSe and In in a quasi-closed space under nearly equilibrium growth conditions. The current-carrier mobility was determined from measurements of the Hall effect in an alternating current and in a variable magnetic field. All the electrical measurements were performed on films 3-5 μ thick in a cryostat enabling them to be made both in air and in a vacuum of approximately 10-5 torr at 90-4000K. It is shown that highly perfect epitaxial activated films of compounds Asup(II)Bsup(VI) can be obtained by the three-temperature method in a quasi-closed space in a single cycle. The current-carrier mobility in the synthesized monocrystalline CdSe:In films reached 600-630 cm2/V.sec. Very low-ohmic epitaxial CdSe layers with resistivity of about 10-3 Ω.cm have been obtained. The dependence between the partial pressure of In vapor in the gas phase and the current-carrier concentration has been established. It has been shown that current-carrier scattering in In-doped CdSe films obtained under nearly equilibrium conditions is governed not by the intercrystalline barriers but by the ionized center concentration