Published March 1991 | Version v1
Journal article

Lattice location and ionic state of Tm ions implanted into CaF2

  • 1. Ritsumeikan Univ., Kyoto (Japan). Faculty of Science and Engineering

Description

Tm+ ions with energy 100 KeV were implanted into (111)-cut CaF2 single crystals at 90 K and room temperature (RT). Ion channeling analysis has revealed that almost all the implanted Tm ions occupy the substitutional sites replacing Ca2+. In order to detect the ionic state of Tm we have tried to apply the 200 KeV Ar+-beam induced luminescence and observed intense two broad emission peaks in the visible region originating from Tm2+ in CaF2. Such a heavy ion-induced luminescence is different from the emission subsequent to the absorption of ultraviolet light. The optical absorption measurement has shown that about 80% of the implanted Tm ions exists as divalent state. (author)

Additional details

Publishing Information

Journal Title
Hosei Daigaku Ion Bimu Kogaku Kenkyusho Hokoku
Journal Issue
suppl.9
Series
Hosei Daigaku Ion Bimu Kogaku Kenkyusho Hokoku.
ISSN
0286-0201
CODEN
HDIHD

Conference

Title
9. symposium on ion beam technology.
Dates
6-8 Dec 1990.
Place
Koganei, Tokyo (Japan).