Published June 15, 2005
| Version v1
Journal article
Preparation of InP-SiO2 3D photonic crystals
- 1. Institute of Opto-electronic Materials and Technology, South China Normal University, Zhongshan Street, Guangzhou 510631 (China)
Description
Fabricated artificial opal templates and low pressure metal-organic chemical-vapor deposition have been used to infill the voids within opals and optimized the growth parameters. Scanning electron microscopy images, X-ray diffraction and reflection spectra results show that the InP is homogeneously distributed inside the opals, with high crystalline quality. The filling ratios of InP in the voids is about 12.8% and the photonic band gap is shifted to higher wavelength as a result of the high contrast of dielectric constants when InP is introduced which are in agreement with theoretical calculations
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.01.399;
- PII
- S0921-4526(05)00430-8;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 363
- Journal Issue
- 1-4
- Journal Page Range
- p. 1-6
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068152
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTALS; INDIUM PHOSPHIDES; OPALS; PERMITTIVITY; REFLECTION; REFLECTIVITY; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; WAVELENGTHS; X-RAY DIFFRACTION; X-RAY SPECTRA
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; INDIUM COMPOUNDS; MICROSCOPY; MINERALS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SILICA; SILICON COMPOUNDS; SPECTRA; SURFACE COATING; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.