Published June 15, 2005 | Version v1
Journal article

Preparation of InP-SiO2 3D photonic crystals

  • 1. Institute of Opto-electronic Materials and Technology, South China Normal University, Zhongshan Street, Guangzhou 510631 (China)

Description

Fabricated artificial opal templates and low pressure metal-organic chemical-vapor deposition have been used to infill the voids within opals and optimized the growth parameters. Scanning electron microscopy images, X-ray diffraction and reflection spectra results show that the InP is homogeneously distributed inside the opals, with high crystalline quality. The filling ratios of InP in the voids is about 12.8% and the photonic band gap is shifted to higher wavelength as a result of the high contrast of dielectric constants when InP is introduced which are in agreement with theoretical calculations

Additional details

Identifiers

DOI
10.1016/j.physb.2005.01.399;
PII
S0921-4526(05)00430-8;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
363
Journal Issue
1-4
Journal Page Range
p. 1-6
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.