Published October 1990 | Version v1
Journal article Metadata-only

Surface morphology and structural properties of CdTe layers grown on GaAs by MOCVD

Creators

  • 1. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

The influence of GaAs substrate orientation, composition of gas phase and temperature of deposition on surface morphology and stucture of CdTe heteroepitaxial layers was investigated. The assumption was made that deterioration of surface morphology reproducibility and structural perfection of CdTe layers on GaAs substrate, observed at the temperatures exceeding 430 deg C, is brought about by direct chemical interaction of the substrate and layer components

Additional details

Additional titles

Original title (Russian)
Морфология поверхности и структурные свойства слоев CdTe, осажденных на GaAs в MOS-процессе

Publishing Information

Journal Title
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
Journal Volume
26
Journal Issue
10
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
2057-2062
ISSN
0002-337X
CODEN
IVNMA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
23041698
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CADMIUM TELLURIDES; CRYSTAL GROWTH; EPITAXY; GALLIUM ARSENIDES; MONOCRYSTALS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; PNICTIDES; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE