Published March 7, 2007 | Version v1
Journal article

Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100)

  • 1. Department of Chemistry and School of Molecular Science (BK 21), Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
  • 2. Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
  • 3. Department of Materials Science and Engineering, 1509 University Avenue, University of Wisconsin-Madison, WI 53706 (United States)
  • 4. Department of Chemical Engineering and Materials Science, University of California, Irvine, CA 92697 (United States)
  • 5. Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, MS 1123, Palo Alto, CA 94304 (United States)

Description

We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 x 2) reconstructions also appear adjacent to the tetragonal Pt2Si nanowires. Formation of the Pt2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy

Additional details

Identifiers

DOI
10.1088/0957-4484/18/9/095706;
PII
S0957-4484(07)35515-3;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
9
Journal Page Range
p. 095706
ISSN
0957-4484