Published 1979
| Version v1
Miscellaneous
Measurement of distribution profile of implanted lithium in silicon detectors by means of the (p,γ)-resonance technique
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Измерение профиля распределения имплантированного лития в кремниевых детекторах методом (п,γ)-резонанса
Publishing Information
- Imprint Title
- Summaries of reports of the 29. Conference on nuclear spectroscopy and nuclear structure
- Journal Page Range
- p. 466.
Conference
- Title
- 29. Conference on nuclear spectroscopy and nuclear structure.
- Dates
- 27 - 30 Mar 1979.
- Place
- Riga, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 10495089
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ANNEALING; ION IMPLANTATION; LI-DRIFTED SI DETECTORS; LITHIUM IONS; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DISTRIBUTION; HEAT TREATMENTS; IONS; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Short note. Imprint:Tezisy dokladov 29. Soveshchaniya po yadernoj spektroskopii i strukture atomnogo yadra.