Study on the dislocation lines in indium doped GaAs crystals by IR scattering tomography and transmission microscopy

The intensity variation of infrared (IR) light 90o scattering, depending on the wave length of the probe beam, by dislocations in an In-doped GaAs crystal, was observed and the calculation of the resonance frequency of electron (ωθ) at and around dislocations was carried out employing the harmonic oscillator model. The variation of ωθ coincides well with that of IR scattering image and extends over a distance of 50 μm from dislocations. Furthermore, they can be classified into two different types depending on the resonance frequencies. (author) 12 refs., 3 figs