Published December 1989 | Version v1
Journal article Metadata-only

Parameter degradation of C MOS devices by ionizing radiation effect

Creators

  • 1. MATRA HARRIS SEMICONDUCTEURS, 44 Nantes (France)
  • 2. MATRA ESPACE, 78 Velizy-Villacoublay (France)

Description

Ionizing radiation effects in CMOS devices cause an increase of trapped charges in the oxides and a high generation rate of interface states leading to shifts of threshold voltages and degradation of carrier mobility in MOS channel. Both these combined effects can make more or less inoperative in time the logic circuits according to their complexity and the total dose charging. This study deals with the MOS device parameter degradations of 2μm double metal MHS technology for cumulative radiation dose ranging up to 100 Krads. Based on the experimental results, parameter degradation laws are given so that the electrical behaviour of basic operators of the gate-array library is predicted

Abstract (French)

L'action des radiations ionisantes sur les structures MOS se traduit par une augmentation des charges piegees dans les oxydes et une generation importante d'etats d'interface conduisant, d'une part a des derives de tensions de seuil, d'autre part a une degradation de la mobilite des porteurs dans le canal des transistors. Ces effets combines peuvent rendre plus ou moins rapidement inoperantes les structures combinatoires suivant leur complexite et la dose de rayonnement recue. L'etude porte sur la derive parametrique de dispositifs MOS de la technologie MHS 2 microns double metal soumis a des doses de rayonnement s'etendant jusqu'a 100 Krads. Des lois d'evolution parametriques sont alors decrites qui permettent de predire le comportement electrique des operateurs elementaires qui constituent la bibliotheque gate-array de cette technologie

Additional details

Additional titles

Original title (French)
Derives parametriques des dispositifs MOS sous l'effet des radiations ionisantes

Publishing Information

Journal Title
Annales de Physique (Les Ulis), Colloque
Journal Volume
14
Journal Issue
6
Series
Ann. Phys. (Les Ulis), Colloq.
Journal Page Range
203-210

Conference

Title
Effects on Components and Systems.
Original Conference Title
Radiations: Effets sur les Composants et Systemes. Radecs 89
Acronym
Radecs 89. Radiations
Dates
11-14 Sep 1989.
Place
Montpellier (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
21068467
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
MOS TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
Descriptors DEC
RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS