Published July 15, 2002 | Version v1
Journal article

Pseudomorphic to orthomorphic growth of Fe films on Cu3Au(001)

  • 1. Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Trieste (Italy)
  • 2. INFM and Dipartimento di Fisica, Universita di Genova, via Dodecaneso 33, I-16146 Genova (Italy)
  • 3. Department of Physics, University of Ljubljana, Slovenia, and Sincrotrone Trieste (Italy)
  • 4. INFM and Dipartimento di Fisica, Universita di Modena e Reggio Emilia, Modena (Italy)
  • 5. Dipartimento di Fisica dell'Universita di Trieste (Italy)

Description

The structure of Fe films grown on the (001) surface of a Cu3Au single crystal at room temperature has been investigated by means of grazing incidence x-ray diffraction (GIXRD) and photo/Auger-electron diffraction (ED) as a function of thickness in the (3-36)-A range. The combination of GIXRD and ED allows one to obtain quantitative information on the in-plane spacing a from the former technique, and the ratio between the vertical spacing c and a, from the latter one. At low coverage the film grows pseudomorphic to the face-centered-cubic substrate. The experimental results obtained on a film of 8 A thickness clearly indicate the overcoming of the limit for pseudomorphic growth. Above this limit the film is characterized by the coexistence of the pseudomorphic phase with another tetragonally strained phase γ, which falls on the epitaxial line of ferromagnetic face-centered cubic Fe. Finally, the development of a body-centered phase α, whose unit cell is rotated by 45 deg. with respect to the substrate one, has been clearly observed at ∼17 A. α is the dominating phase for film thickness above ∼25 A and its lattice constant evolves towards the orthomorphic phase in strict quantitative agreement with epitaxial curves calculated for body-centered tetragonal iron phases

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
66
Journal Issue
4
Journal Page Range
p. 045402-045402.9
ISSN
1098-0121

Optional Information

Notes
(c) 2002 The American Physical Society