Published May 1994 | Version v1
Journal article Metadata-only

Electrical properties of InP-In2S3 heterostructures

Creators

  • 1. Voronezhskij Tekhnologicheskij Inst., Voronezh (Russian Federation)

Description

Electrophysical properties of InP-In2S3 heterostructures are investigated. Connection of the structure characteristics with features of In2S3 films growth is analyzed. It is shown that the temperature dependences of the volt-ampere and volt-farad characteristics and also anomalous relaxation of the InP-In2S3 heterostructure capacitance may be explained on the base of the model of semiconductor substrate - film with a nonuniform potential relief formed due to doping In2S3 films in the process of their growth

Additional details

Additional titles

Original title (Russian)
Электрофизические свойства гетероструктур InP-Ин

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
28
Journal Issue
5
Journal Page Range
p. 808-814.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26040343
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC CONDUCTIVITY; FILMS; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INDIUM SULFIDES; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THICKNESS
Descriptors DEC
CHALCOGENIDES; DIMENSIONS; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE