Published December 2007
| Version v1
Journal article
H atom relaxation in Si
Creators
- 1. Nanoscience and Nanotechnology Center, ISIR, Osaka University Mihogaoka 8-1, Ibaraki, Osaka, 567-0047 (Japan)
Description
It is believed that hydrogen in silicon is located at the bond center. But, the hydrogen atom is actually deviated significantly from the bond center dynamically, which is illustrated by the present calculations. The fast relaxation to bending causes a large decay rate of the H vibration
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 92
- Journal Issue
- 1
- Journal Page Range
- p. 012147
- ISSN
- 1742-6596
Conference
- Title
- 12. international conference on phonon scattering in condensed matter
- Acronym
- PHONONS 2007
- Dates
- 15-20 Jul 2007
- Place
- Paris (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39039775
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMS; CHEMICAL BONDS; HYDROGEN; OSCILLATIONS; RELAXATION; SILICON
- Descriptors DEC
- ELEMENTS; NONMETALS; SEMIMETALS