Published June 1993
| Version v1
Journal article
Annealing effect on electric conductivity and thermo- e.m.f. of CuInSe2 crystals of hole type
- 1. AN SSSR, Makhachkala (Russian Federation). Fizicheskij Inst.
Description
The influence of annealing in vacuum and Se vapors at 400-600 deg C on electric conductivity, mobility of charge carriers and thermo-e.m.f. of p-CuInSe2 crystals grown by the Bridgeman vertical method was studied. Mechanisms of changes in electrophysical properties of the samples produced are discussed
Additional details
Additional titles
- Original title (Russian)
- Влияние отжига на электропроводимость и термо-ЭДС кристаллов CuInSe
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 29
- Journal Issue
- 6
- Journal Page Range
- p. 785-787.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26019867
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; COPPER SELENIDES; ELECTRIC CONDUCTIVITY; INDIUM SELENIDES; MONOCRYSTALS; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; CRYSTALS; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS