Conductive microtip electrode array with variable aspect ratio using combination process of reactive ion etching
- 1. Department of Electrical and Computer Engineering, Seoul National University, Seoul (Korea, Republic of)
- 2. Department of Electronics and Electrical Engineering, Dankook University, Yongin (Korea, Republic of)
- 3. Department of Mechanical Engineering, Dankook University, Yongin (Korea, Republic of)
Description
A micromachining process for a conductive microtip electrode array has been developed using a combination process of reactive ion etching. A localized conical ultra-micro electrode (UME) with submicron width is realized on the tip end for electrochemical measurements. A height of several tens of microns of the silicon microtip is achieved, and the area beyond the UME is covered with dielectric material for electrical insulation. A high-aspect-ratio silicon microtip is fabricated using anisotropic and isotropic etching with varying the gap and diameter of the etch masks. Cyclic voltammetry is conducted to characterize the electrochemical properties of the UMEs. The results indicate that the electrical connection on the UME works successfully, and the measured peak currents were found to be in good agreement with the values estimated from analysis based on conical UME theory. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/23/11/115009Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 23
- Journal Issue
- 11
- Journal Page Range
- [10 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47053849
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; ASPECT RATIO; DIELECTRIC MATERIALS; ELECTRICAL INSULATION; ELECTROCHEMISTRY; ELECTRODES; ETCHING; IONS; MACHINING; PEAKS; SILICON; VOLTAMETRY
- Descriptors DEC
- CHARGED PARTICLES; CHEMISTRY; DIMENSIONLESS NUMBERS; ELEMENTS; MATERIALS; SEMIMETALS; SURFACE FINISHING