Amorphous silicon large area electronics
Description
Large area electronics is a recently established technology for optical scanners and liquid crystal displays. The devices are fabricated from deposited thin films because size requirements prevent the use of single crystal silicon substrates. This technology has potential applications in medical imaging and high energy particle physics. Hydrogenated amorphous silicon (a-Si:H) satisfies the requirements for large area electronics. This material is deposited on glass, and can be fabricated into field effect transistors, light senors and other circuit elements. This paper describes the structure and performance of the individual a-Si:H device elements, the processing of large arrays and some anticipated future improvements in materials and devices
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- IEEE nuclear science symposium conference record emdash 1990
- Imprint Pagination
- 1636 p.
- Journal Page Range
- p. 250.
Conference
- Title
- 1990 Institute of Electrical and Electronics Engineers (IEEE) nuclear science symposium.
- Dates
- 22-27 Oct 1990.
- Place
- Arlington, VA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22090685
- Subject category
- S42: ENGINEERING; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEPOSITION; DISPLAY DEVICES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; FABRICATION; FIELD EFFECT TRANSISTORS; IMAGE SCANNERS; LIQUID CRYSTALS; MATERIALS; OPTICAL SYSTEMS; PERFORMANCE; SEMICONDUCTOR DETECTORS; SILICON COMPOUNDS; STRUCTURAL MODELS; THIN FILMS
- Descriptors DEC
- COMPUTER OUTPUT DEVICES; COMPUTER-GRAPHICS DEVICES; CRYSTALS; EQUIPMENT; FILMS; FLUIDS; LIQUIDS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-9010220--.