Defects and impurity studies in III-V quantum wells using Fourier transform photoluminescence spectroscopy

In this paper we discuss the problems associated with performing excitation spectroscopy on impurities and defects in the one micron region of the optical spectrum. We show that this difficult region can be probed successfully using Fourier transform methods. We report preliminary findings of impurity and defect structures of lattice matched InGaAs quantum wells. (author) 4 refs., 5 figs