Published 2018 | Version v1
Journal article Metadata-only

Method for determining and calculating the internal voltage in the active layer of GaInAsP/InP heterostructures

Creators

  • 1. S.U. Umarov Physical-Technical Institute, Dushanbe (Tajikistan)

Description

The paper presents a method for determining and calculating internal stresses in GaInAsP/InP heterostructures with different active layer thicknesses d> 0.1 μm. The features of stress distribution in the active layer are studied. A number of double-sided heterostructures with different levels of internal stresses have been studied by means of luminescence method. (author)

Availability note (English)

Available from http://elibrary.ru/

Additional details

Additional titles

Original title (Russian)
Методика определения и расчета внутреннего напряжения в активном слоые гетероструктур GaInAsP/InP

Identifiers

URL
http://elibrary.ru/;

Publishing Information

Journal Title
Izvestiya Akademii Nauk Tadzhikskoj SSR. Otdelenie Fiziko-Matematicheskikh, Khimicheskikh i Geologicheskikh Nauk
Journal Volume
3
Journal Issue
172
Journal Page Range
p. 36-41
ISSN
0002-3485
CODEN
IATOAN

INIS

Country of Publication
Tajikistan
Country of Input or Organization
Tajikistan
INIS RN
54109475
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CRYSTAL LATTICES; ELASTICITY; ELECTRIC POTENTIAL; LASERS; LUMINESCENCE; POLARIZATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
CRYSTAL STRUCTURE; EMISSION; MECHANICAL PROPERTIES; PHOTON EMISSION; TEMPERATURE RANGE