Published August 1991
| Version v1
Journal article
Simultaneous implantation of electrically active and isovalent impurities into semi-insulating gallium arsenide
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
Properties of layers resulted from implantation of Si, P, Ar, Se, Ga, Kr ions and their Si+P, Si+Ar, Se+Ga, Se+Kr combinations into GaAs:Cr semi-insulating substrates, are studied. Combined implantation of (P,Ga) isovalent and (Si, Se) donor impurities is shown to enable to increase concentration and mobility of electrons in the layer. Probable reasons of this phenomenon are discussed
Additional details
Additional titles
- Original title (Russian)
- Совместная имплантация в полиизолирующий арсенид галлия электричеси активной и изовалентной примеси
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 25
- Journal Issue
- 8
- Journal Page Range
- p. 1355-1360.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24060595
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CHROMIUM ADDITIONS; CONCENTRATION RATIO; CRYSTALS; DEPTH; GALLIUM ARSENIDES; GALLIUM IONS; ION IMPLANTATION; KRYPTON IONS; PHOSPHORUS IONS; PHOTOLUMINESCENCE; SILICON IONS; SPATIAL DISTRIBUTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; EMISSION; GALLIUM COMPOUNDS; IONS; LUMINESCENCE; MOBILITY; PHOTON EMISSION; PNICTIDES