Published October 2000 | Version v1
Journal article Metadata-only

Production of high-tension high-power switch transistors by high energy electron irradiation

Creators

  • 1. Nanjing Univ., Nanjing (China)

Description

The high energy (12 MeV) electrons were used to irradiate the high-power switch transistors. The irradiated transistors had good switch performance, high thermal stability and parameter consistency

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
23
Journal Issue
10
Journal Page Range
p. 743-745
ISSN
0253-3219

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
32018541
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRON BEAMS; IRRADIATION; MEV RANGE 10-100; PERFORMANCE; SWITCHING DIODES; TRANSISTORS
Descriptors DEC
BEAMS; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES