Published 1984 | Version v1
Miscellaneous Open

Radiation induced segregation and point defects in binary copper alloys

Description

Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author)

Availability note (English)

MF available from INIS under the Report Number.

Abstract (Portuguese)

Estuda-se os efeitos da irradiacao de eletrons de 1 MeV de energia em ligas binarias de cobre onde os elementos de liga sao o berilio, a platina e o estanho, respectivamente de tamanho atomico menor, semelhante e maior com relacao ao atomo de cobre. Verifica-se como se desenvolvem os processos ligados a segregacao e a difusao de defeitos puntiformes induzidos por irradiacao eletronica (1 MeV) utilizando-se, como tecnica, a microscopia eletronica de transmissao de alta voltagem. Sao observados, em um grande intervalo de temperatura de irradiacao, a estabilizacao e o crescimento de aneis de discordancia para as ligas Cu-Sn e Cu-Pt, enquanto que para a liga Cu-Be constata-se a presenca de precipitados induzidos por radiacao, com formacao da fase estavel γ. (Autor)

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Additional details

Additional titles

Original title (Portuguese)
Segregacao e difusao de defeitos induzidos por radiacao em ligas binarias de cobre

Publishing Information

Imprint Pagination
142 p.
Report number
INIS-BR--393