Published January 2, 2012 | Version v1
Journal article Metadata-only

Band offsets in HfO2/InGaZnO4 heterojunctions

Creators

  • 1. Department of Nanomechatronics Engineering, Pusan National University, Gyeongnam 627-706 (Korea, Republic of)
  • 2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  • 3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Description

The valence band discontinuity (ΔEV) of sputter deposited HfO2/InZnGaO4 (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO2 exhibited a bandgap of 6.07 eV from absorption measurements. A value of ΔEV = 0.48 ± 0.025 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. This implies a conduction band offset ΔEC of 2.39 eV in HfO2/InGaZnO4 heterostructures and a nested interface band alignment.

Additional details

Identifiers

DOI
10.1063/1.3673905;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
1
Journal Page Range
p. 012105-012105.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43112681
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION; DEPOSITION; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY LEVELS; EV RANGE; GALLIUM OXIDES; HAFNIUM OXIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; SEMICONDUCTOR MATERIALS; SPUTTERING; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CHALCOGENIDES; ELECTRON SPECTROSCOPY; ENERGY RANGE; GALLIUM COMPOUNDS; HAFNIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SORPTION; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2012 American Institute of Physics