Ion implantation in microelectronics - III-V compounds

Ion implantation is not only most widely used as a process for selectively introducing controlled amount of n- and p-type impurities in III-V compounds, but has become one of the key processes in the fabrication of GaAs MESFETs and their large scale integration. Many problems encouneterd during implantation and post-implantation annealing especially in GaAs and InP and techniques used to minimize/overcome them are discussed in this review. Some ion implantation work carried out toward fabrication of GaAs devices and circuits are also mentioned. (author). 65 refs., 3 figs., 3 tabs