Published 2002
| Version v1
Miscellaneous
Chemical composition of oxide layers on GaAs implanted with indium ions
Creators
- 1. Institute of Physics, M. Curie-Sklodowska University, Lublin (Poland)
- 2. Instytute of Applied Physics, Belarussian State University, Minsk (Belarus)
- 3. Joint Institute for Nuclear Research, Frank Laboratory of Neutron Physics, Dubna (Russian Federation)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 112
Conference
- Title
- 4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Dates
- 10-13 Jun 2002
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075167
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIC COMPOUNDS; ARSENIC OXIDES; CHEMICAL COMPOSITION; DOSE-RESPONSE RELATIONSHIPS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GALLIUM OXIDES; INDIUM COMPOUNDS; INDIUM IONS; INDIUM OXIDES; ION IMPLANTATION; LAYERS; NUCLEAR REACTIONS; OXIDES; PHOTOELECTRON SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; SUBSTRATES; THICKNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHARGED PARTICLES; DIMENSIONS; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SPECTROSCOPY