Published December 12, 2005
| Version v1
Journal article
Avalanche multiplication in AlGaN based solar-blind photodetectors
- 1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Description
Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7 MV/cm
Additional details
Identifiers
- DOI
- 10.1063/1.2140610;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 24
- Journal Page Range
- p. 241123-241123.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37021682
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALUMINIUM NITRIDES; BREAKDOWN; ELECTRIC FIELDS; GALLIUM NITRIDES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR MATERIALS; SIMULATION; TOWNSEND DISCHARGE; ULTRAVIOLET RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ELECTRIC DISCHARGES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2005 American Institute of Physics